| PART |
Description |
Maker |
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM
3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| 256KX18 128KX36 IS61NVP25618A IS61NLP12832B-200B2 |
128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM
128K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
128K X 36 ZBT SRAM, 2.6 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
128K X 36 ZBT SRAM, 2.6 ns, PQFP100 TQFP-100
128K X 36 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
128K X 36 ZBT SRAM, 3.1 ns, PBGA165 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PBGA119
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 3.1 ns, PQFP100
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
Integrated Silicon Solu...
|
| CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC |
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
|
| MCM64Z916ZP100R MCM64Z834ZP100R |
512K X 18 ZBT SRAM, 5 ns, PBGA119
256K X 36 ZBT SRAM, 5 ns, PBGA119
|
MOTOROLA INC
|
| GS8162Z72C-150I GS8162Z18B-250I GS8162Z18B-200I GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8161Z18BT-150I GS8161Z18BGT-150 GS8161Z32BD-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| MT55L256V18F1 MT55L256L18F1 |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
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